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bipolar analog integrated circuit pc4558 high performance dual operational amplifier data sheet document no. g10518ejav0ds00 (10th edition) date published march 2004 n cp(k) printed in japan the mark shows major revised points. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. 1987 description the pc4558 is a dual type operational amplifier having inte rnal phase compensating circuits, its electrical characteristics features higher s peed, broader bandwidth, and lower noise co mpared with such conventional general purpose operational amplifier as pc741. therefore, application to active filt ers, audio amplifiers, vco, etc. can be r ealized with simple circuit composition. features ? internal frequency compensation ? low noise ? output short circuit protection ordering information part number package pc4558c 8-pin plastic dip (7.62 mm (300)) pc4558g2 8-pin plastic sop (5.72 mm (225)) pc4558g2(5) 8-pin plastic sop (5.72 mm (225)) equivalent circuit (1/2 circuit) r 1 r 9 q 5 q 7 q 13 q 11 r 5 r 7 r 8 out q 2 q 1 q 8 9 q r 3 q 10 r 4 r 2 c 1 i i i n v v + ? q 15 q 4 q 3 c 2 d q 14 q 12 r 6 ? + q 6 pin configuration (top view) pc4558c, 4558g2 1 1 2 3 4 8 7 6 5 v + out 2 i i2 i n2 + ? i i1 i n1 out 1 v ? 2 + ?
data sheet g10518ejav0ds 2 parameter symbol ratings unit voltage between v + and v ? note 1 v + - v ? ?0.3 to +36 v differential input voltage v id 30 v input voltage note 2 v i v ? ?0.3 to v + +0.3 v output voltage note 3 v o v ? ?0.3 to v + +0.3 v c package note 4 350 mw power dissipation g2 package note 5 p t 440 mw output short circuit duration note 6 indefinite sec operating ambient temperature t a ?20 to +80 c storage temperature t stg ?55 to +125 c notes 1. reverse connection of supply voltage can cause destruction. 2. the input voltage should be allow ed to input without damage or destruc tion. even during the transition period of supply voltage, power on/off etc., this specification should be k ept. the normal operation will establish when the both inputs are within the common mode input voltage range of electrical characteristics. 3. this specification is t he voltage which should be allowed to supply to the output terminal from external without damage or destructive. even duri ng the transition period of supply voltage, power on/off etc., this specification should be kept. the output voltage of normal operation will be the output voltage swing of electrical characteristics. 4. thermal derating factor is ?5.0 mv/c when oper ating ambient temperatur e is higher than 55c. 5. thermal derating factor is ?4.4 mv/c when oper ating ambient temperatur e is higher than 25c. 6. pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, note 4 and note 5. recommended operating conditions parameter symbol min. typ. max. unit supply voltage v 4 16 v
data sheet g10518ejav0ds 3 pc4558 pc4558c, pc4558g2 electrical characteristics (t a = 25c, v = 15 v) parameter symbol conditions min. typ. max. unit input offset voltage v io r s 10 ? 0.5 6.0 mv input offset current note i io 5 200 na input bias current note i b 60 500 na large signal voltage gain a v r l 2 k ? , v o = 10 v 20,000 100,000 power consumption p d i o = 0 a 90 170 mw common mode rejection ratio cmr r s 10 k ? 70 90 db source variation rejection ratio svr r s 10 k ? 30 150 v/v r l 10 k ? 12 14 v output voltage swing v om r l 2 k ? 10 13 v common mode input voltage range v icm 12 14 v slew rate sr a v = 1 1.0 v/ s input equivalent noise voltage v n r s = 1 k ? , f = 1 hz to 1 khz (figure1) 6 v p-p channel separation f = 1 khz (figure2) 105 db note input bias currents flow out from ic, because each curr ents are base current of pnp- transistor on input stage. when using these ics, pay careful attention to the following points. 1. the total of the internal power di ssipation, when the loads of both channels ar e short-circuited at the same time. 2. the likelihood of interfer ence between the channels, due to the temperature gradient of the chip, when the internal power dissipation of the left and right channels differ greatly in circuits handling low level inputs. pc4558g2 (5) electrical characteristics (t a = 25c, v = 15 v) parameter symbol conditions min. typ. max. unit input offset voltage v io r s 10 ? 0.5 2.0 mv input offset current note i io 5 50 na input bias current note i b 60 100 na large signal voltage gain a v r l 2 k ? , v o = 10 v 50,000 100,000 power consumption p d i o = 0 a 90 135 mw common mode rejection ratio cmr r s 10 k ? 85 90 db source variation rejection ratio svr r s 10 k ? 30 75 v/v r l 10 k ? 12.5 14 v output voltage swing v om r l 2 k ? 11 13 v common mode input voltage range v icm 13 14 v slew rate sr a v = 1 1.0 v/ s input equivalent noise voltage v n r s = 1 k ? , f = 1 hz to 1 khz (figure1) 6 v p-p channel separation f = 1 khz (figure2) 105 db note input bias currents flow out from ic, because each curr ents are base current of pnp- transistor on input stage. when using these ics, pay careful attention to the following points. 1. the total of the internal power di ssipation, when the loads of both channels ar e short-circuited at the same time. 2. the likelihood of interfer ence between the channels, due to the temperature gradient of the chip, when the internal power dissipation of the left and right channels differ greatly in circuits handling low level inputs.
data sheet g10518ejav0ds 4 50 ? 1 k ? ? 15 v ? + 1 k ? 100 k ? +15 v v o v n = v o 2000 figure2 channel separation measurement circuit 50 k ? 50 ? v o2 v o1 channel separation = 20 log ( ) 1 1000 v o2 v o1 ? + 10 k ? 10 k ? + ?
data sheet g10518ejav0ds 5 typical performance characteristics (t a = 25c, typ.) 600 500 400 300 200 100 32 36 28 24 20 16 12 8 4 0 100 120 80 60 40 20 0 30 25 20 15 10 5 0 20406080100 100 1 k 10 k 100 k 1 m 100 1 k 10 k 20 power dissipation large signal frequency response input bias current input offset voltage outout voltage swing l p t - total power dissipation -mw v om - output voltage swing - v p-p v om - output voltage swing - v p-p v io - input offset voltage - mv i b - input bias current - na t a - operating ambient temperature - ? c r l - load resistance - ? f - frequency - hz t a - operating ambient temperature - ? ct a - operating ambient temperature - ? c pc4558g2 200 ? c/w 227 ? c/w pc4558c = 15 v v + _ _ + = 15 v v + _ _ + = 15 v v + _ _ + 100 120 80 60 40 20 0 1 10 1 k 100 k 1 m 10 m 100 10 k open loop frequency response av - open loop voltage gain db f- frequency - hz = 15 v v + _ _ + ? 20 0 40 60 80 ? 20 0 40 60 80 20 3 2 1 0 ? 1 ? 2 ? 3 = 15 v v + _ _ + each 5 samples data
data sheet g10518ejav0ds 6 0 common mode input voltage range v icm - common mode input voltage range -v v - supply voltage - v 20 10 0 ? 10 ? 20 1000 300 100 30 10 e n -input equivalent noise voltage density - nv/ hz input equivalent noise voltage density 1 f - frequency - hz 1 k 10 100 v o - output voltage - v 0 ? 10 ? 5 5 10 voltage follower pulse response 40 30 20 10 0 t - time - s = 15 v v + _ _ + 20 + _ 10 + _ 4 3 2 1 0 0 supply current i cc - supply current - ma v - supply voltage - v + _ 20 _ + 10 _ + +
data sheet g10518ejav0ds 7 application circuit + ? + + + 2.2 k ? 0.0022 f 0.01 f 390 k ? 36 k ? pc4558 33 f 56 k ? 1 k ? ? 15 v 47 f 100 f 10 k ? output 100 f +15 v 33 f + input ? ? ? ? ? riaa preamp (a v = 32.5 db) typical characteristic distortion 0.03% (v o = 1v r.m.s. , f = 1 khz) noise 1.0 v r.m.s. (input equiv., input short peak det., average indication) 1.0 0.1 0.01 0.01 0.1 1.0 thd - total harmonic distortion - % v o - output voltage - v r.m.s. 0.001 1 1 khz high-pass filter on 20 khz 10 khz 1 khz 20 hz total harmonic distortion peak level meter this circuit converts the peak voltage (about 10 mv to 10 v) of the input signal to a dc voltage (about 0.2 v to 1.3 v) and drives the meter. since the output voltage is proportional to the logarithmic value of the peak voltage of t he input signal, indication of a much wider dynamic range can be obtained compar ed to conventional linear indicating methods. 1s953 1s953 51 k ? -40 db to +5 db (0 db = 1 v p-p ) + ? + ? + ? + ? 30 k ? 1s953 100 k ? 30 k ? 15 k ? 1s953 30 k ? + 15 v 2sk163 20 k ? 30 k ? ? 15 v 30 k ? +15 v 30 k ? ? 15 v 100 k ? pc4558 1/2 pc4558 1/2 pc324 1/4 pc324 1/4 1s953 x 2 20 k ? 200 k ? 0.22 f 2 k ? ?15 v 10 k ? + log-compression full-wave rectification peak hold meter amp. + 15 v ? 3.3 f
data sheet g10518ejav0ds 8 package drawings (unit : mm) 14 85 item millimeters notes 1. each lead centerline is located within 0.25 mm of its true position (t.p.) at maximum material condition. p8c-100-300b,c-2 n 0.25 p 0.9 min. r0 15 a 10.16 max. b 1.27 max. f 1.4 min. g 3.2 0.3 j 5.08 max. k 7.62 (t.p.) c 2.54 (t.p.) d 0.50 0.10 h 0.51 min. i 4.31 max. l 6.4 m 0.25 + 0.10 ? 0.05 2. ltem "k" to center of leads when formed parallel. m a r m p i j h g f dn c b 8-pin plastic dip (7.62mm(300)) l k
data sheet g10518ejav0ds 9 item b c i 8-pin plastic sop (5.72 mm (225)) d e f g h j p millimeters 1.27 (t.p.) 0.78 max. 4.4 0.15 0.1 0.1 0.42 1.59 0.21 6.5 0.3 1.49 + 0.08 ? 0.07 1.1 0.2 3 + 7 ? 3 each lead centerline is located within 0.12 mm of its true position (t.p.) at maximum material condition. a 5.2 + 0.17 ? 0.20 k l m n 0.6 0.2 0.17 0.12 0.10 + 0.08 ? 0.07 s8gm-50-225b-6 85 1 4 s m c detail of lead end a m s n f g b e d p h i j k l
data sheet g10518ejav0ds 10 pc4558 recommended soldering conditions the pc4558 should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact an nec electronics sales representative. for technical information, see the following website. semiconductor device mount manual (http ://www.necel.com/pkg/en/mount/index.html) type of surface mount device pc4558g2: 8-pin plastic sop (5.72 mm (225)) process conditions symbol infrared ray reflow peak temperature: 230 c or below (package surface temperature), reflow time: 30 seconds or less (at 210c or higher), maximum number of reflow processes: 1 time. ir30-00-1 vapor phase soldering peak temperature: 215c or below (package surface temperature), reflow time: 40 seconds or less (at 200c or higher), maximum number of reflow processes: 1 time. vp15-00-1 wave soldering solder temperature: 260c or below, flow time: 10 seconds or less, maximum number of flow processes: 1 time, pre-heating temperature: 120c or bel ow (package surface temperature). ws60-00-1 partial heating method pin temperature: 300c or below, heat time: 3 seconds or less (per each side of the device). ? caution apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. type of through-hole device pc4558c: 8-pin plastic dip (7.62 mm (300)) process conditions wave soldering (only to leads) solder temperature: 260c or below, flow time: 10 seconds or less. partial heating method pin temperature: 300c or below, heat time: 3 seconds or less (per each lead). caution for through-hole device, the wave soldering process must be app lied only to leads, and make sure that the package body does not get jet soldered.
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